Diodes Incorporated ZXTN2007GTA BJTs - Bipolar Transistors 30V NPN Low Sat

Width: 3.7 mm

Height: 1.65 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 112 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 3 W

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 7 A

Maximum DC Collector Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 185 mV