Diodes Incorporated ZXTD720MCTA BJTs - Bipolar Transistors Dual 40V PNP Low Sat Ic -3A 104mOhm -3A

Technology: Si

Unit Weight: 13 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.5 W

Gain Bandwidth Product fT: 190 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300 at - 10 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 260 mV