Diodes Incorporated ZXTD619MCTA BJTs - Bipolar Transistors Dual 50V NPN Low Sat 4A Ic 68mOhm 6A HFE

Technology: Si

Unit Weight: 13 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 450 at 200 mA, 2 V

Gain Bandwidth Product fT: 165 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300 at 200 mA, 2 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 270 mV