Diodes Incorporated ZXTD617MCTA BJTs - Bipolar Transistors Dual 15V NPN Low Sat 4.5A Ic 100mV 45mOhm

Technology: Si

Unit Weight: 13 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 415 at 10 mA, 2 V

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 240 mV