Diodes Incorporated ZXTD4591E6TA BJTs - Bipolar Transistors Dual 60V NPN/PNP

Width: 1.75 mm

Height: 1.3 mm

Length: 3 mm

Technology: Si

Unit Weight: 6.500 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.7 W

Gain Bandwidth Product fT: 180 MHz, 150 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV, 600 mV