Diodes Incorporated ZXTC6719MCTA BJTs - Bipolar Transistors Dual 50V NPN 40V PNP Low SAT Trans

Technology: Si

Unit Weight: 13 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.5 W

Gain Bandwidth Product fT: 165 MHz, 190 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V, 50 V

Continuous Collector Current: - 3 A, 4 A

Maximum DC Collector Current: 4 A, 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V

Collector- Emitter Voltage VCEO Max: 50 V, 40 V

Collector-Emitter Saturation Voltage: 270 mV, 260 mV