Diodes Incorporated ZXTC6718MCQTA BJTs - Bipolar Transistors Pwr Low Sat Transistor

Technology: Si

Unit Weight: 39 g

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.5 W

Gain Bandwidth Product fT: 140 MHz, 180 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 40 V, 25 V

Maximum DC Collector Current: 4.5 A, 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 210 mV, 225 mV