Diodes Incorporated ZXTC2061E6TA BJTs - Bipolar Transistors 12V 1A Medium Power TRANSISTOR

Width: 1.8 mm

Height: 1.3 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 15 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.7 W

DC Current Gain hFE Max: 500 at 10 mA, 2 V

Gain Bandwidth Product fT: 260 MHz, 310 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 20 V, 12 V

Maximum DC Collector Current: 5 A, 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 500 at 10 mA, 2 V at NPN, 480 at 1 A, 2 V at NPN, 260 at 5 A, 2 V at NPN, 500 at 10 mA, 2 V at PNP, 290 at 1 A, 2 V at PNP, 75 at 3.5 A, 2 V at PNP

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 145 mV, 150 mV