Diodes Incorporated ZXT12N50DXTA BJTs - Bipolar Transistors Dual 50V NPN

Width: 3.1 mm

Height: 0.95 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 140 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 870 mW

DC Current Gain hFE Max: 250 at 10 mA, 2 V

Gain Bandwidth Product fT: 132 MHz

Emitter- Base Voltage VEBO: 7.5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 250 at 10 mA, 2 V, 300 at 1 A, 2 V, 150 at 3 A, 2 V, 50 at 5 A, 2 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 135 mV