Diodes Incorporated ZXT11N20DFTA BJTs - Bipolar Transistors 20V NPN SuperSOT4

Width: 1.4 mm

Height: 1 mm

Length: 3.05 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 160 MHz

Emitter- Base Voltage VEBO: 7.5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 2.5 A

Maximum DC Collector Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 90 mV