Diodes Incorporated ZXT10N15DE6TA BJTs - Bipolar Transistors 15V NPN SuperSOT4

Width: 1.8 mm

Height: 1.3 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 6.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.1 W

DC Current Gain hFE Max: 200 at 10 mA, 2 V

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V, 300 at 200 mA, 2 V, 200 at 3 A, 2 V, 150 at 5 A, 2 V

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 230 mV