Diodes Incorporated ZX5T851ASTZ BJTs - Bipolar Transistors NPN 60V 4.5A 3-PIN

Width: 2.41 mm

Height: 4.01 mm

Length: 4.77 mm

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 100 at 10 mA, 1 V

Gain Bandwidth Product fT: 130 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 150 V

Maximum DC Collector Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 170 mV