Diodes Incorporated ZTX955 BJTs - Bipolar Transistors PNP Medium Power

Width: 2.41 mm

Height: 4.01 mm

Length: 4.77 mm

Technology: Si

Unit Weight: 453.600 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1.2 W

Gain Bandwidth Product fT: 110 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: - 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 140 V