Diodes Incorporated ZTX953STZ BJTs - Bipolar Transistors PNP Big Chip SELine

Width: 2.41 mm

Height: 4.01 mm

Length: 4.77 mm

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1.2 W

DC Current Gain hFE Max: 100 at 10 mA, 1 V

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 140 V

Continuous Collector Current: - 3.5 A

Maximum DC Collector Current: 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 100 V