Diodes Incorporated ZTX718STZ BJTs - Bipolar Transistors PNP High Gain

Width: 2.41 mm

Height: 4.01 mm

Length: 4.77 mm

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 300 at 10 mA, 2 V

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: - 2.5 A

Maximum DC Collector Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 150 at 2 A, 2 V, 35 at 4 A, 2 V, 15 at 6 A, 2 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 190 mV