Diodes Incorporated ZTX692B BJTs - Bipolar Transistors NPN Super E-Line

Width: 2.41 mm

Height: 4.01 mm

Length: 4.77 mm

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 500 at 100 mA, 2 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 70 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 500 at 100 mA, 2 V, 400 at 500 mA, 2 V, 150 at 1 A, 2 V

Collector- Emitter Voltage VCEO Max: 70 V

Collector-Emitter Saturation Voltage: 500 mV