Diodes Incorporated ZDT1053TA BJTs - Bipolar Transistors Dual 75V NPN HighG

Width: 3.7 mm

Height: 1.6 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 117 g

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.75 W

DC Current Gain hFE Max: 260

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 150 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 260 at 10 mA, 2 V, 300 at 1 A, 2 V, 150 at 2 A, 2 V, 30 at 5 A, 2 V

Collector- Emitter Voltage VCEO Max: 75 V

Collector-Emitter Saturation Voltage: 300 mV