Diodes Incorporated HBDM60V600X-7 BJTs - Bipolar Transistors Functional Array SOT363 T&R 3K

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 300

Emitter- Base Voltage VEBO: 5.5 V, 6 V

Collector- Base Voltage VCBO: 60 V, 80 V

Continuous Collector Current: 600 mA, 500 mA

Maximum DC Collector Current: 600 mA, 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 60 V, 65 V

Collector-Emitter Saturation Voltage: 300 mV, 200 mV