Diodes Incorporated FMMT723QTA BJTs - Bipolar Transistors 100V PNP Low Sat 625mW -1A 210mOhm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: - 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300 at - 10 mA, - 10 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 210 mV