Diodes Incorporated FMMT619QTA BJTs - Bipolar Transistors SS Low Sat Transistor SOT23 T&R 3K

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 806 mW

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 165 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 150 mV