Diodes Incorporated FMMT591AQTA BJTs - Bipolar Transistors 40V PNP Med PWR 350mOhm -500mV -1A

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 800 at - 100 mA, - 5 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300 at - 100 mA, - 5 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 500 mV