Diodes Incorporated DXTN07100BP5Q-13 BJTs - Bipolar Transistors Pwr Mid Perf Transistor

Technology: Si

Unit Weight: 93 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 3.2 W

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 175 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 230 mV