Diodes Incorporated DXT2014P5-13 BJTs - Bipolar Transistors BIPOLAR TRANS,PNP -140V,-4A

Technology: Si

Unit Weight: 96 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 740 mW

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: - 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 5 at - 10 A, - 5 V

Collector- Emitter Voltage VCEO Max: 140 V

Collector-Emitter Saturation Voltage: 360 mV