Diodes Incorporated DSS4220V-7 BJTs - Bipolar Transistors LOW VCE(SAT) NPN SMT

Width: 1.2 mm

Height: 0.6 mm

Length: 1.6 mm

Technology: Si

Unit Weight: 6 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 600 mW

DC Current Gain hFE Max: 220 at 1 mA, 2 V

Gain Bandwidth Product fT: 260 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 20 V