Diodes Incorporated DSS4160DS-7 BJTs - Bipolar Transistors NPN, NPN 60Vceo 1A 1.1W 200Hfe 150MHz

Technology: Si

Unit Weight: 15 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.1 W

Gain Bandwidth Product fT: 220 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 250 at 1 mA, 5 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 100 mV