Diodes Incorporated DP350T05-7 BJTs - Bipolar Transistors PNP BIPOLAR

Width: 1.4 mm

Height: 1 mm

Length: 3.05 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 300 mW

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 350 V

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 350 V

Collector-Emitter Saturation Voltage: 1 V