Diodes Incorporated DMN61D8LVTQ-7 MOSFETs N-Ch Enh Mode FET 41 to 60V Low Rdson

Fall Time: 440 ns

Rise Time: 301 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 740 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.09 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 131 ns

Typical Turn-Off Delay Time: 582 ns

Id - Continuous Drain Current: 630 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 80 mS

Rds On - Drain-Source Resistance: 1.1 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V