Diodes Incorporated DMN61D8LQ-7 MOSFETs 60V Enh Mode FET 12Vgss 470mA 610mW

Fall Time: 440 ns

Rise Time: 301 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 740 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 610 mW

Vgs - Gate-Source Voltage: - 5 V, + 5 V

Typical Turn-On Delay Time: 131 ns

Typical Turn-Off Delay Time: 582 ns

Id - Continuous Drain Current: 470 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.8 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V