Diodes Incorporated DMN10H120SFG-13 MOSFETs FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF

Fall Time: 2.5 ns

Rise Time: 1.8 ns

Technology: Si

Unit Weight: 30 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 10.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.8 ns

Typical Turn-Off Delay Time: 11.5 ns

Id - Continuous Drain Current: 3.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 68 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V