Diodes Incorporated DMC2041UFDB-7 MOSFETs 20V Complementary 12Vgs 0.6mm ESD

Fall Time: 2.6 ns, 20.4 ns

Rise Time: 15.9 ns, 9.5 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 15 nC, 18 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.4 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 3.6 ns, 5 ns

Typical Turn-Off Delay Time: 16 ns, 29.7 ns

Id - Continuous Drain Current: 4.7 A, 3.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 23 mOhms, 59 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 350 mV, 1.4 V