Diodes Incorporated DDTB114EU-7-F Pre-Biased Bipolar Transistor
ModelDDTB114EU-7-F
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R1/R2: 1
Rated power: 200mW
Mounting Type: Surface Mount
Power-Maximum: 200mW
Transistor type: PNP-Prebias
Collector current: 500mA
DC electricity gain: 56@50mA|5V
Frequency-Transition: 200MHz
Resistance-Base (R1): 10kOhm
Vce Saturation (maximum): 300mV@2.5mA|50mA
Collector-emitter voltage: 50V
Resistance-Emitter base (R2): 10kOhm
DC current gain (hFE) (minimum): 56@50mA,5V
Current-Collector (Ic) (maximum): 500mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
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