Diodes Incorporated DDTA144VE-7 Pre-Biased Bipolar Transistor
ModelDDTA144VE-7
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R1/R2: 4.7
Rated power: 150mW
Mounting Type: Surface Mount
Power-Maximum: 150mW
Transistor type: PNP-Prebias+Diode
Collector current: 100mA
DC electricity gain: 33@10mA|5V
Frequency-Transition: 250MHz
Resistance-Base (R1): 47kOhm
Vce Saturation (maximum): 300mV@500uA|10mA
Collector-emitter voltage: 50V
Resistance-Emitter base (R2): 10kOhm
DC current gain (hFE) (minimum): 33@10mA,5V
Current-Collector (Ic) (maximum): 100mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
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