Diodes Incorporated BC856BW-7-F BJTs - Bipolar Transistors BIPOLAR TRANSISTOR PNP SOT-323
ModelBC856BW-7-F
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Width: 1.35 mm
Height: 1 mm
Length: 2.2 mm
Technology: Si
Unit Weight: 5 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 200 mW
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 80 V
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 220 at -2 mA, - 5 V
Collector- Emitter Voltage VCEO Max: 65 V
Collector-Emitter Saturation Voltage: 250 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts

