Diodes Incorporated APT17NTR-G1 BJTs - Bipolar Transistors 480V NPN High Volt Bvces 700V 10Vebo

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 36.5 at 100 uA, 20 V

Emitter- Base Voltage VEBO: 10 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 21 at 100 uA, 20 V

Collector- Emitter Voltage VCEO Max: 480 V