Diodes Incorporated 2DD2678-13 BJTs - Bipolar Transistors LO VSAT NPN SMT 2.5K

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 270

Gain Bandwidth Product fT: 170 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 270 at 500 mA, 2 V

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 250 mV