Diodes Incorporated 2DA1971-7 BJTs - Bipolar Transistors 400V PNP Trans 140Ic -100mA -0.5A

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.5 W

Gain Bandwidth Product fT: 75 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 400 V

Continuous Collector Current: - 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 140

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 400 mV