Diodes Incorporated 2DA1201YQTC BJTs - Bipolar Transistors 120V PNP Trans 100mA -0.8V PWR

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.5 W

Gain Bandwidth Product fT: 160 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: - 800 mA

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 1 V