Central Semiconductor PN5137 TIN/LEAD BJTs - Bipolar Transistors NPN 30Vcbo 20Vceo 3.0Vebo 150mA 35pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 400 at 1 V, 150 mA

Gain Bandwidth Product fT: 40 MHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 1 V, 150 mA

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 250 mV