Central Semiconductor PN4033 TIN/LEAD BJTs - Bipolar Transistors PNP 80Vcbo 80Vceo 5.0Vebo 1.0A 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 300 at 100 mA, 5 V

Gain Bandwidth Product fT: 400 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 75 at 0.1 mA, 5 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 150 mV