Central Semiconductor PN3566 TRC TIN/LEAD BJTs - Bipolar Transistors NPN 40Vcbo 30Vceo 5.0Vebo 600mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 600 at 10 V, 10 mA

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 80 at 10 V, 2 mA

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 1 V