Central Semiconductor PN3566 PBFREE BJTs - Bipolar Transistors NPN Gen Pur SW

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 600

Gain Bandwidth Product fT: 40 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 1 V