Central Semiconductor MPS6535 TIN/LEAD BJTs - Bipolar Transistors PNP 30Vcbo 30Vceo 4.0Vebo 100mA 7.0pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30 at 1 V, 100 mA

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 500 mV