Central Semiconductor MPS6522 PBFREE BJTs - Bipolar Transistors PNP 25Vcbo 25Vceo 4.0Vebo 100mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 400 at 2 mA, 10 V

Gain Bandwidth Product fT: 350 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200 at 2 mA, 10 V

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 500 mV