Central Semiconductor MPS6512 PBFREE BJTs - Bipolar Transistors NPN 40Vcbo 30Vceo 4.0Vebo 50mA 3.5pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 100 at 10 V, 2 mA

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30 at 10 V, 100 mA

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 500 mV