Central Semiconductor MPS455 TIN/LEAD BJTs - Bipolar Transistors NPN 160Vcbo 140Vceo 1.0A 1.0W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 300 at 10 V, 150 mA

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100 at 10 V, 150 mA

Collector- Emitter Voltage VCEO Max: 140 V

Collector-Emitter Saturation Voltage: 700 mV