Central Semiconductor MPS3826 TIN/LEAD BJTs - Bipolar Transistors NPN 60Vcbo 45Vceo 4.0Vebo 10mA
ModelMPS3826 TIN/LEAD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 160 at 10 V, 10 mA
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 4 V
Collector- Base Voltage VCBO: 60 V
DC Collector/Base Gain hfe Min: 40 at 10 V, 10 mA
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