Central Semiconductor CZT2907A TR TIN/LEAD BJTs - Bipolar Transistors PNP Trans 60Vcbo 60Vcbo 60Vceo 2W

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 300 at 150 mA, 10 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100 at 150 mA, 10 V

Collector- Emitter Voltage VCEO Max: 60 V