Central Semiconductor BC394 TIN/LEAD BJTs - Bipolar Transistors NPN AMPL/SWITCH 180Vcbo 180Vceo 7.0

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 400 mW

DC Current Gain hFE Max: 100 at 10 mA, 10 V

Gain Bandwidth Product fT: 5 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 175 C

DC Collector/Base Gain hfe Min: 50 at 10 mA, 10 V

Collector- Emitter Voltage VCEO Max: 180 V

Collector-Emitter Saturation Voltage: 300 mV