Central Semiconductor BC337-25 TRE TIN/LEAD BJTs - Bipolar Transistors NPN 50Vcbo 45Vceo 5.0Vebo 800mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 400 at 1 V, 100 mA

Gain Bandwidth Product fT: 210 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 160 at 1V, 100 mA

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 700 mV