Central Semiconductor 2SC1815-GR PBFREE BJTs - Bipolar Transistors NPN 60Vcbo 50Vceo 5.0Vebo 150mA 400mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 400 mW

DC Current Gain hFE Max: 400 at 6 V, 2 mA

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 6 V, 2 mA

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 250 mV